Recently, researchers at the Institute of Physics, Chinese Academy of Sciences and Beijing National Laboratory for Condensed Matter Physics, Wang Wenlong, Fu Wangyang, Wang Enge and others collaborated with researchers from the National Institutes of Materials Research (NIMS) in the surface chemical modification and carbon doping of BN nanotubes. New progress has been made in this area. Related research results have been published in the recent J. Am. Chem. Soc. (2008, 130, 8144).
Wang Enge's research group has been engaged in the research of light-element B, C, and N system nanotube materials. This time, they used a water-soluble derivative of conjugated organic molecules (PTAS) as a modifier molecule in an aqueous solution system, through non-communist For the first time, the valence of π-π interacts successfully with carboxyl functionalized BN nanotubes, which opens up a new way for the application of BN nanotubes in chemical and biological sensors and nanocomposites. In addition, a more meaningful result of this work is the successful development of a new method for C-doping of BN nanotubes based on the chemical modification of BN nanotubes surface by PTAS. The BN nanotubes used in the study were multi-walled tubes. The results showed that the C-doped doping only occurred in the few near-surface BN lattices in the multi-walled nanotubes, while the inner BNs were Not being doped by C. In other words, the doped product is a BCN/BN coaxial heterogeneous nanotube structure. Further electrical transport measurement results show that the electrical properties of BN nanotubes after C doping control have changed significantly: Unlike the behavior of insulators in pure BN nanotubes, the BCN nanotube layer exhibits typical p-type semiconductor behavior.
Boron nitride (BN) nanotubes are an important member of the light element nanotube family. In the periodic table of the elements, C is an element of No. 6, and B and N are No. 5 and No. 7 elements respectively. The BN pair and the CC pair are equal to each other. BN nanotubes have a graphitized structure similar to C nanotubes, and have the same excellent mechanical properties and thermal conductivity as C nanotubes, and at the same time have higher resistance to high temperature and oxidation resistance. In addition, unlike the C nanotubes, the electronic band structure of the BN nanotubes has nothing to do with the diameter and the chirality, and their electrical properties are uniformly controllable. The band gap width of pure BN nanotubes is about 5.5 eV, which is a wide bandgap semiconductor material. Both theoretical and experimental studies have shown that the bandgap of BN nanotubes can be further regulated by the application of lateral electric field (Stark Effect), structural deformation, doping, and the like. Among the most research-intensive is the substitution doping of C atoms. Based on the similarity of the structure of BN and C nanotubes, the doping of C can be controlled to achieve a large adjustment of the bandgap width of the nanotubes between BN and C. The controllable and adjustable electronic energy band structure makes BN and BCN nanotubes have important application prospects in the fields of nanoelectronic devices and other fields.
The research work was funded by the National Natural Science Foundation of China.
Wang Enge's research group has been engaged in the research of light-element B, C, and N system nanotube materials. This time, they used a water-soluble derivative of conjugated organic molecules (PTAS) as a modifier molecule in an aqueous solution system, through non-communist For the first time, the valence of π-π interacts successfully with carboxyl functionalized BN nanotubes, which opens up a new way for the application of BN nanotubes in chemical and biological sensors and nanocomposites. In addition, a more meaningful result of this work is the successful development of a new method for C-doping of BN nanotubes based on the chemical modification of BN nanotubes surface by PTAS. The BN nanotubes used in the study were multi-walled tubes. The results showed that the C-doped doping only occurred in the few near-surface BN lattices in the multi-walled nanotubes, while the inner BNs were Not being doped by C. In other words, the doped product is a BCN/BN coaxial heterogeneous nanotube structure. Further electrical transport measurement results show that the electrical properties of BN nanotubes after C doping control have changed significantly: Unlike the behavior of insulators in pure BN nanotubes, the BCN nanotube layer exhibits typical p-type semiconductor behavior.
Boron nitride (BN) nanotubes are an important member of the light element nanotube family. In the periodic table of the elements, C is an element of No. 6, and B and N are No. 5 and No. 7 elements respectively. The BN pair and the CC pair are equal to each other. BN nanotubes have a graphitized structure similar to C nanotubes, and have the same excellent mechanical properties and thermal conductivity as C nanotubes, and at the same time have higher resistance to high temperature and oxidation resistance. In addition, unlike the C nanotubes, the electronic band structure of the BN nanotubes has nothing to do with the diameter and the chirality, and their electrical properties are uniformly controllable. The band gap width of pure BN nanotubes is about 5.5 eV, which is a wide bandgap semiconductor material. Both theoretical and experimental studies have shown that the bandgap of BN nanotubes can be further regulated by the application of lateral electric field (Stark Effect), structural deformation, doping, and the like. Among the most research-intensive is the substitution doping of C atoms. Based on the similarity of the structure of BN and C nanotubes, the doping of C can be controlled to achieve a large adjustment of the bandgap width of the nanotubes between BN and C. The controllable and adjustable electronic energy band structure makes BN and BCN nanotubes have important application prospects in the fields of nanoelectronic devices and other fields.
The research work was funded by the National Natural Science Foundation of China.
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